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Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W

Especificaciones

DESCRIPTION

RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

FEATURES

  • Supply with Tape and Reel. 500 Units per Reel
  • Employing Mold Package
  • High Power and High Efficiency

Performance Specifications

Pout: 75W typ, Drain Effi.: 64% typ

@ Vds=12.5V Idq=1.0A Pin=5.5W f=530MHz

Pout: 84W typ, Drain Effi.: 74% typ

@ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz

Integrated: gate protection diode

TECHNICAL SPECIFICATIONS

Absolute Maximum Ratings (Tc=25°C)

VDSS: Drain to Source Voltage (Vgs=0V): 40 V

VGSS: Gate to Source Voltage (Vds=0V): -5/+10 V

Pch: Channel Dissipation (Tc=25°C): 300 W

Pin: Input Power (Zg=Zl=50Ω): 12 W

ID: Drain Current: 20 A

Tch: Channel Temperature: 175 °C

Tstg: Storage Temperature: -40 to +175 °C

Rthj-c: Thermal Resistance (Junction to Case): 0.5 °C/W

Electrical Characteristics (Tc=25°C)

IDSS: Zero Gate Voltage Drain Current (VDS=37V, VGS=0V): Max 150 μA

IGSS: Gate to Source Leak Current (VGS=10V, VDS=0V): Max 2.5 μA

VTH: Gate Threshold Voltage (VDS=12V, IDS=1mA): Min 1.6V, Typ 2.0V, Max 2.4V

VSWRT: Load VSWR Tolerance (20:1): All phase, VDS=16.3V increased after Pout adjusted to 70W (Zg/Zl=50Ω)

Note: Above parameters are guaranteed independently

TYPICAL PERFORMANCE CHARACTERISTICS

VHF Band (135-175 MHz)

Frequency Range: 135-175 MHz

Typical Conditions: Vds=12.5V, Idq=Total 1A (One side 0.5A), Pin=4.0W

Power Gain: 12-18 dB typical across band

Drain Current: 6-20 A typical across band

Input Return Loss: Better than -15 dB at 175 MHz

UHF Band (450-530 MHz)

Frequency Range: 450-530 MHz

Typical Conditions: Vds=12.5V, Idq=Total 1A (One side 0.5A), Pin=5.5W

Power Gain: 9-15 dB typical across band

Drain Current: 8-22 A typical across band

Input Return Loss: Better than -20 dB at 450 MHz

CAPACITANCE CHARACTERISTICS

Ciss (Input Capacitance): 50-250 pF typical @ Vds=0-40V, f=1MHz

Coss (Output Capacitance): 50-250 pF typical @ Vds=0-40V, f=1MHz

Crss (Reverse Transfer Capacitance): 0-30 pF typical @ Vds=0-40V, f=1MHz

All capacitance measurements at Ta=+25°C

APPLICATION

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.

Evaluation Board References:

  • VHF Evaluation Board: Mitsubishi VHF Evaluation Board (f=135-175 MHz)
  • UHF Evaluation Board: Mitsubishi UHF Evaluation Board (f=450-530 MHz)
  • For detailed evaluation board information, refer to APPLICATION NOTE 'AN-VHF-049'

RoHS COMPLIANT

RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter 'G' after the Lot Marking. This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

  • Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than 85% lead.)