Silicon RF Power MOSFET Power Transistor, 175 MHz, 530 MHz, 70W
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Información Básica
Especificaciones Técnicas
DESCRIPTION
RD70HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
FEATURES
- Supply with Tape and Reel. 500 Units per Reel
- Employing Mold Package
- High Power and High Efficiency
Performance Specifications
Pout: 75W typ, Drain Effi.: 64% typ
@ Vds=12.5V Idq=1.0A Pin=5.5W f=530MHz
Pout: 84W typ, Drain Effi.: 74% typ
@ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
Integrated: gate protection diode
TECHNICAL SPECIFICATIONS
Absolute Maximum Ratings (Tc=25°C)
VDSS: Drain to Source Voltage (Vgs=0V): 40 V
VGSS: Gate to Source Voltage (Vds=0V): -5/+10 V
Pch: Channel Dissipation (Tc=25°C): 300 W
Pin: Input Power (Zg=Zl=50Ω): 12 W
ID: Drain Current: 20 A
Tch: Channel Temperature: 175 °C
Tstg: Storage Temperature: -40 to +175 °C
Rthj-c: Thermal Resistance (Junction to Case): 0.5 °C/W
Electrical Characteristics (Tc=25°C)
IDSS: Zero Gate Voltage Drain Current (VDS=37V, VGS=0V): Max 150 μA
IGSS: Gate to Source Leak Current (VGS=10V, VDS=0V): Max 2.5 μA
VTH: Gate Threshold Voltage (VDS=12V, IDS=1mA): Min 1.6V, Typ 2.0V, Max 2.4V
VSWRT: Load VSWR Tolerance (20:1): All phase, VDS=16.3V increased after Pout adjusted to 70W (Zg/Zl=50Ω)
Note: Above parameters are guaranteed independently
TYPICAL PERFORMANCE CHARACTERISTICS
VHF Band (135-175 MHz)
Frequency Range: 135-175 MHz
Typical Conditions: Vds=12.5V, Idq=Total 1A (One side 0.5A), Pin=4.0W
Power Gain: 12-18 dB typical across band
Drain Current: 6-20 A typical across band
Input Return Loss: Better than -15 dB at 175 MHz
UHF Band (450-530 MHz)
Frequency Range: 450-530 MHz
Typical Conditions: Vds=12.5V, Idq=Total 1A (One side 0.5A), Pin=5.5W
Power Gain: 9-15 dB typical across band
Drain Current: 8-22 A typical across band
Input Return Loss: Better than -20 dB at 450 MHz
CAPACITANCE CHARACTERISTICS
Ciss (Input Capacitance): 50-250 pF typical @ Vds=0-40V, f=1MHz
Coss (Output Capacitance): 50-250 pF typical @ Vds=0-40V, f=1MHz
Crss (Reverse Transfer Capacitance): 0-30 pF typical @ Vds=0-40V, f=1MHz
All capacitance measurements at Ta=+25°C
APPLICATION
For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
Evaluation Board References:
- VHF Evaluation Board: Mitsubishi VHF Evaluation Board (f=135-175 MHz)
- UHF Evaluation Board: Mitsubishi UHF Evaluation Board (f=450-530 MHz)
- For detailed evaluation board information, refer to APPLICATION NOTE 'AN-VHF-049'
RoHS COMPLIANT
RD70HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter 'G' after the Lot Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
- Lead in high melting temperature type solders. (i.e. tin-lead solder alloys containing more than 85% lead.)